Increased switching speeds of wide bandgap (WBG) semiconductors result in a significant magnitude of the displacement currents through power module parasitic capacitances that are inherent in packaging design. This is of increasing concern, particularly in case of newly emerging medium-voltage (MV) SiC MOSFETs since the magnitude of the displacement currents can be several order higher due to the fast switching transients and increased voltage magnitudes of the SiC MOSFETs compared to their Si counter parts. The severity intensifies when the magnitude of the displacement current becomes comparable to a significant fraction of SiC MOSFETs rated current, leading to the worsened impact on the converter electromagnetic interference (EMI) as well as performance in terms of switching losses. The key objective of this article is to provide a detail insight into the impact of the module parasitic capacitances on the SiC MOSFET switching dynamics and losses. To realize this, a welldefined approach to dissect the switching energy dissipation is proposed, based on which the detailed analysis and quantitative measurements of the module parasitic capacitance impact on terms of added switching energy losses, and common-mode currents are investigated using a custom-packaged 10-kV halfbridge SiC MOSFET power modules. The theoretical analysis and experimental results obtained from dynamic as well as static characterization reveal that the impact of the module parasitic capacitance on the switching energy dissipation is twofold and substantially adverse such that it cannot be overlooked considering its intended application in the high-power MV power electronic converters.

中文翻译：

---

电源模块寄生电容对中压SiC MOSFET开关瞬态的影响

宽带隙（WBG）半导体开关速度的提高会导致通过封装设计中固有的功率模块寄生电容的位移电流显着增加。这引起了越来越多的关注，特别是在新兴的中压（MV）SiC MOSFET的情况下，因为与它们的Si相比，由于SiC MOSFET的快速开关瞬变和更高的电压幅度，其位移电流的幅度可能高出几个数量级。柜台零件。当位移电流的大小变得可与SiC MOSFET额定电流的很大一部分相媲美时，严重性会加剧，从而导致对转换器电磁干扰（EMI）以及开关损耗性能的影响更加恶化。本文的主要目的是详细了解模块寄生电容对SiC MOSFET开关动力学和损耗的影响。为了实现这一点，提出了一种定义明确的方法来剖析开关能量耗散，在此基础上，对模块寄生电容对增加的开关能量损失的影响进行了详细的分析和定量测量，并使用定制方法研究了共模电流。封装的10 kV半桥SiC MOSFET电源模块。