SiC-based wide bandgap semiconductor devices such as metal-oxide-semiconductor field-effect transistors (MOSFETs) are gradually replacing Si devices in industrial applications because of their excellent electrothermal properties. However, the reliability of these devices and the problem of the junction temperature estimation are concerns that are yet to be resolved for these applications. This article proposes a method to measure the Cauer-type RC thermal network parameters that consider the influence of degradation of the external cooling system using either two or four case temperature cooling curves. The proposed method simplifies the measurement not only of the junction temperature and the power loss but also of the thermal equilibrium condition and it is thus suitable for the application in a power converter. Experiments were performed to prove that the thermal network parameters obtained are both feasible and credible.

中文翻译：

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外壳温度测量SiC MOSFET模块的热参数

诸如金属氧化物半导体场效应晶体管（MOSFET）之类的基于SiC的宽带隙半导体器件，由于其优异的电热性能，正在逐步取代工业应用中的Si器件。但是，这些设备的可靠性和结温估计问题是这些应用尚未解决的问题。本文提出了一种使用两种或四种情况温度冷却曲线测量考虑外部冷却系统性能下降影响的Cauer型RC热网参数的方法。所提出的方法不仅简化了结温和功率损耗的测量，而且简化了热平衡条件的测量，因此适用于功率转换器中的应用。