Wide-bandgap devices, such as silicon carbide and gallium nitride, have high switching speed potential. However, the actual speed in practical application is limited by circuit parasitics and interaction between high-side switch and lowside switch in a phase-leg configuration, known as crosstalk effect. This article proposes an isolated voltage source gate driver with crosstalk suppression capability to take full advantage of the inherent high switching speed ability of silicon-carbide devices. By applying variable gate voltage through the auxiliary circuit, the crosstalk problem can be mitigated. Using the original gate-source voltage as auxiliary circuit driving signal, the gate driver does not introduce any extra control signals, which avoids additional signal/power isolations and makes the auxiliary circuit very convenient to be implemented on the existing commercial gate driver. The auxiliary circuit makes the gate voltage rise from 0 V other than -5 V when the switch turns on, leading to faster switching speed and lower switching loss compared with a traditional gate driver. LTSPICE simulation and double pulse test experiment based on 1.2-kV/60-A silicon-carbide MOSFETs are conducted to evaluate the crosstalk suppression capability of the proposed gate driver.

中文翻译：

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智能自驱动多级栅极驱动器，可快速抑制SiC MOSFET的开关和串扰

诸如碳化硅和氮化镓之类的宽带隙器件具有很高的开关速度潜力。但是，实际应用中的实际速度受到电路寄生效应以及相脚配置中高端开关与低端开关之间相互作用的限制，这种现象被称为串扰效应。本文提出了一种具有串扰抑制功能的隔离式电压源栅极驱动器，以充分利用碳化硅器件固有的高开关速度功能。通过通过辅助电路施加可变的栅极电压，可以减轻串扰问题。使用原始的栅极-源极电压作为辅助电路驱动信号，栅极驱动器不会引入任何额外的控制信号，这避免了额外的信号/电源隔离，并使辅助电路非常方便地在现有的商用栅极驱动器上实现。辅助电路使开关导通时，栅极电压从-5 V以外的0 V上升，与传统的栅极驱动器相比，开关速度更快，开关损耗更低。进行了基于1.2kV / 60-A碳化硅MOSFET的LTSPICE仿真和双脉冲测试实验，以评估所提出的栅极驱动器的串扰抑制能力。