The silicon (Si)/silicon carbide (SiC) hybrid switch comprising a Si insulated gate bipolar translator (IGBT) and a SiC metal-oxide-semiconductor field effect transistor (MOSFET) in parallel offers not only excellent performance and cost tradeoff but also inherent switch-level redundancy for potential power converter fault-tolerant operation. It is possible to operate the power converter even when either the SiC MOSFET or the Si IGBT experiences an open-circuit fault. This article first analyzes various switch failure scenarios and then proposes a novel fault-tolerant control strategy for a single-phase inverter based on the Si/SiC hybrid switches to mitigate a single-point switch failure and maintain inverter operation. Experimental results validate the effectiveness of the proposed fault-tolerant control strategy.

中文翻译：

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基于Si / SiC混合开关的容错逆变器操作

硅（Si）/碳化硅（SiC）混合开关包括并联的Si绝缘栅双极型转换器（IGBT）和SiC金属氧化物半导体场效应晶体管（MOSFET），不仅具有出色的性能和成本折衷，而且还具有固有的优势开关级冗余，可实现潜在的电源转换器容错操作。即使SiC MOSFET或Si IGBT发生开路故障，也可以操作功率转换器。本文首先分析了各种开关故障情况，然后针对基于Si / SiC混合开关的单相逆变器提出了一种新颖的容错控制策略，以减轻单点开关故障并维持逆变器运行。实验结果验证了所提出的容错控制策略的有效性。