Wide-bandgap (WBG) power semiconductor devices have become increasingly popular due to their superior characteristics compared to their Si counterparts. However, their fast switching speed and the ability to operate at high frequencies brought new challenges, among which the electromagnetic interference (EMI) is one of the major concerns. Many works investigated the structures of WBG power devices and their switching performance. In some cases, the conductive or radiated EMI was measured. However, the EMI-related topics, including their influence on noise sources, noise propagation paths, EMI reduction techniques, and EMC reliability issues, have not yet been systematically summarized for WBG devices. In this article, the literature on EMI research in power electronics systems with WBG devices is reviewed. Characteristics of WBG devices as EMI noise sources are reviewed. EMI propagation paths, near-field coupling, and radiated EMI are surveyed. EMI reduction techniques are categorized and reviewed. Specifically, the EMI-related reliability issues are discussed, and solutions and guidelines are presented.

中文翻译：

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带有宽带隙半导体器件的电力电子系统中EMI研究概述

宽带隙（WBG）功率半导体器件由于其与Si同类器件相比的优越特性而变得越来越受欢迎。但是，它们的快速开关速度和在高频下工作的能力带来了新的挑战，其中电磁干扰（EMI）是主要问题之一。许多工作研究了WBG功率器件的结构及其开关性能。在某些情况下，会测量导电或辐射EMI。但是，尚未对WBG设备系统地总结与EMI相关的主题，包括它们对噪声源，噪声传播路径，EMI降低技术以及EMC可靠性问题的影响。在本文中，将回顾有关带WBG器件的电力电子系统中EMI研究的文献。回顾了WBG设备作为EMI噪声源的特性。研究了EMI传播路径，近场耦合和辐射EMI。降低EMI的技术已归类并进行了审查。具体而言，讨论了与EMI相关的可靠性问题，并提出了解决方案和指南。