Abstract We report reducing the density of threading dislocations (TDs) in stacking-fault-free semipolar (20 2 ¯ 1 ) GaN grown on sapphire by inserting an AlGaN/GaN superlattice (SL). We have studied the influence of AlGaN/GaN SL on the reduction of TDs and found that the density of TDs decreases by more than a factor of three with increasing the number of AlGaN/GaN SL pairs up to 10. Furthermore, blue light emitting diodes (LEDs) have been grown on semipolar (20 2 ¯ 1 ) GaN/sapphire templates with inserted 10 pairs of AlGaN/GaN SL showing doubled light output power in comparison with the LEDs grown without AlGaN/GaN SL.

中文翻译：

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通过减少 AlGaN/GaN 超晶格夹层的穿透位错来提高半极性 (202¯1) 发光二极管的性能

摘要 我们报告了通过插入 AlGaN/GaN 超晶格 (SL) 来降低在蓝宝石上生长的堆叠无故障半极性 (20 2 ¯ 1 ) GaN 中的穿透位错 (TD) 密度。我们研究了 AlGaN/GaN SL 对 TDs 减少的影响，发现随着 AlGaN/GaN SL 对的数量增加到 10，TDs 的密度降低了 3 倍以上。此外，蓝色发光二极管(LED) 在半极性 (20 2 ¯ 1 ) GaN/蓝宝石模板上生长，插入了 10 对 AlGaN/GaN SL，与不使用 AlGaN/GaN SL 生长的 LED 相比，显示出双倍的光输出功率。