Abstract We report on indium nitride growth on sapphire substrates by migration-enhanced plasma-assisted metal organic chemical vapor deposition (MEPA-MOCVD). The growth is studied in the temperature range from 700 °C to 957 °C, well above the decomposition temperature of indium nitride in conventional MOCVD. Raman spectroscopy, atomic force microscopy, and X-ray diffraction indicate polycrystalline grainy InN film growth.

中文翻译：

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动力学稳定的高温 InN 生长

摘要 我们报告了通过迁移增强等离子体辅助金属有机化学气相沉积 (MEPA-MOCVD) 在蓝宝石衬底上生长氮化铟。在 700 °C 至 957 °C 的温度范围内研究生长，远高于传统 MOCVD 中氮化铟的分解温度。拉曼光谱、原子力显微镜和 X 射线衍射表明多晶粒状 InN 膜生长。