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Revealing multiple classes of stable quantum emitters in hexagonal boron nitride with correlated optical and electron microscopy.
Nature Materials ( IF 37.2 ) Pub Date : 2020-02-24 , DOI: 10.1038/s41563-020-0616-9
Fariah Hayee 1 , Leo Yu 2 , Jingyuan Linda Zhang 3 , Christopher J Ciccarino 4 , Minh Nguyen 5 , Ann F Marshall 6 , Igor Aharonovich 5 , Jelena Vučković 3 , Prineha Narang 4 , Tony F Heinz 2, 7 , Jennifer A Dionne 8, 9
Affiliation  

Defects in hexagonal boron nitride (hBN) exhibit high-brightness, room-temperature quantum emission, but their large spectral variability and unknown local structure challenge their technological utility. Here, we directly correlate hBN quantum emission with local strain using a combination of photoluminescence (PL), cathodoluminescence (CL) and nanobeam electron diffraction. Across 40 emitters, we observe zero phonon lines (ZPLs) in PL and CL ranging from 540 to 720 nm. CL mapping reveals that multiple defects and distinct defect species located within an optically diffraction-limited region can each contribute to the observed PL spectra. Local strain maps indicate that strain is not required to activate the emitters and is not solely responsible for the observed ZPL spectral range. Instead, at least four distinct defect classes are responsible for the observed emission range, and all four classes are stable upon both optical and electron illumination. Our results provide a foundation for future atomic-scale optical characterization of colour centres.

中文翻译:

用相关的光学和电子显微镜揭示六方氮化硼中的多种稳定量子发射体。

六方氮化硼(hBN)中的缺陷显示出高亮度的室温量子发射,但是其大的光谱可变性和未知的局部结构挑战了其技术实用性。在这里,我们使用光致发光(PL),阴极发光(CL)和纳米束电子衍射的组合将hBN量子发射与局部应变直接相关。在40个发射器中,我们观察到PL和CL中的零声子线(ZPL)范围为540至720 nm。CL映射揭示了位于光学衍射限制区域内的多个缺陷和不同的缺陷种类均可以有助于观察到的PL光谱。局部应变图表明,激活发射器不需要应变,并且应变不完全负责观察到的ZPL光谱范围。代替,至少四个不同的缺陷类别负责观察到的发射范围,并且所有四个类别在光学和电子照射下都是稳定的。我们的结果为将来的色心原子级光学表征提供了基础。
更新日期:2020-02-24
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