Developing a precise and reproducible bandgap tuning method that enables tailored design of materials is of crucial importance for optoelectronic devices. Towards this end, we report a sphere diameter engineering (SDE) technique to manipulate the bandgap of two-dimensional (2D) materials. A one-to-one correspondence with an ideal linear working curve is established between the bandgap of MoS₂ and the sphere diameter in a continuous range as large as 360 meV. Fully uniform bandgap tuning of all the as-grown MoS₂ crystals is realized due to the isotropic characteristic of the sphere. More intriguingly, both a decrease and an increase of the bandgap can be achieved by constructing a positive or negative curvature. By fusing individual spheres in the melted state, post-synthesis bandgap adjustment of the supported 2D materials can be realized. This SDE technique, showing good precision, uniformity and reproducibility with high efficiency, may further accelerate the potential applications of 2D materials.

开发一种精确且可重复的带隙调谐方法以实现材料的定制设计对于光电器件至关重要。为此，我们报告了一种球直径工程 (SDE) 技术来操纵二维 (2D) 材料的带隙。MoS ₂的带隙与球径在360 meV的连续范围内建立了与理想线性工作曲线的一一对应关系。所有生长的 MoS _{2 的}完全均匀的带隙调谐由于球体的各向同性特性，实现了晶体。更有趣的是，可以通过构造正曲率或负曲率来实现带隙的减小和增加。通过在熔化状态下融合单个球体，可以实现支持的二维材料的合成后带隙调整。这种 SDE 技术显示出良好的精度、均匀性和可重复性以及高效率，可能会进一步加速二维材料的潜在应用。