The purpose of this work is to develop a model for normal grain growth in U₃Si₂. The average grain boundary energy was determined from previously published molecular dynamics simulations. The grain growth kinetics were quantified at various temperatures by annealing nanocrystalline samples. The mobility was determined by comparing phase field grain growth simulations to the experimental data. From these various methods, we found that the average grain size D in U₃Si₂ can be estimated over time t using the equation $D^2-D_0^2=2\alpha M\gamma t$, where $D_0$ is the initial average grain size, the geometry factor $\alpha =0.96$, the average grain boundary mobility $M=6.30\times {10}^{-18}{e}^{-\frac{0.33\left[\text{eV}\right]}{k_{b}T}}{\text{m}}^4/\left(\text{Js}\right)$ with the Boltzmann constant $k_b$ and temperature T, and the average grain boundary energy has been found as a function of temperature, e.g. $\overline{\gamma }=0.83$ J/m² at 673 K.

这项工作的目的是建立U ₃ Si _2中正常晶粒生长的模型。平均晶界能由先前发表的分子动力学模拟确定。通过退火纳米晶样品在不同温度下对晶粒生长动力学进行定量。通过将相场晶粒生长模拟与实验数据进行比较来确定迁移率。从这些不同的方法中，我们发现可以使用以下公式估算随时间t的U ₃ Si ₂中的平均晶粒尺寸D$d^2-d_0^2=2\alpha \mathrm{中号}\gamma Ť$，在哪里 $d_0$ 是初始平均晶粒尺寸，几何系数 $\alpha =0.96$，平均晶界迁移率 $\mathrm{中号}=6.30\times {10}^{-\mathrm{18岁}}{Ë}^{-\frac{0.33\left[\text{电子伏特}\right]}{{ķ}_bŤ}}{\text{米}}^4/（\text{s}）$ 玻尔兹曼常数 ${ķ}_b$和温度T，并且已经发现平均晶界能是温度的函数，例如$\overline{\gamma }=0.83$J / m ²在673K。