Abstract High-quality InP is grown by solid source molecular beam epitaxy using white phosphorus source in a three-zone valved cracker cell. The growth temperature, growth rate and substrate desorption process have been adjusted to optimize the structural, electrical and optical properties. The photon and carrier scattering dynamics are investigated by temperature-dependent photoluminescence and electron Hall mobility. The 5-μm-thick sample presents stronger photoluminescence, solo carrier recombination scheme and inferior impurity scattering comparing to the 1-μm-thick sample. The high electron mobility of 137000 cm2/V·s at 77 K has been achieved for the 5-μm-thick InP layer.

中文翻译：

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通过固体源分子束外延生长的高电子迁移率 InP

摘要 高质量 InP 是通过固体源分子束外延在三区阀门裂解电池中使用白磷源生长的。对生长温度、生长速率和基材解吸过程进行了调整，以优化结构、电学和光学特性。通过温度相关的光致发光和电子霍尔迁移率研究光子和载流子散射动力学。与 1 微米厚的样品相比，5 微米厚的样品表现出更强的光致发光、单独载流子重组方案和较差的杂质散射。5 μm 厚的 InP 层在 77 K 下实现了 137000 cm2/V·s 的高电子迁移率。