Abstract To synchronously improve mechanical properties and electrical conductivity of polyimide (PI) films, PI films with excellent mechanical, electrical conductivity, and antistatic properties that modified by reduced graphene oxide (rGO) were prepared by in-situ polymerization. Depending on the reaction between isocyanate groups and hydroxyl groups on rGO sheets, effectively chemical bonding between rGO and PI matrix was accomplished. They realized excellent compatibility and homogeneous dispersion in PI films and provided strong interfacial interaction with the PI matrix. Testing results revealed that with increasing rGO dosage, more and more groups formed between rGO and PI matrix. At the 0.7 wt% of rGO dosage, tensile strength and elastic modulus of the films increased to a maximum of 103.12 MPa and 3.90 GPa, respectively. Compared with pure PI films synthesized by anhydride and isocyanate, they enhanced about 74 % and 65 %, respectively. Moreover, surface and volume resistivity of films decreased with increasing rGO dosage. The surface resistivity of the films could reduce to 1.232×107 Ω with rGO dosage justly 1.0 wt%. It enhanced approximately nine orders of magnitude compared with pure PI films and met the standard for antistatic film material. Dielectric constant at 100 Hz reached to 4.808 (about 85 % increase compared with pure PI films). These results indicated that mechanical properties and electrical conductivity of PI films realized improvement synchronously by the incorporation of rGO. This invention will further promote the widespread application of PI films in electronic packaging fields. Download : Download high-res image (70KB) Download : Download full-size image

中文翻译：

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还原氧化石墨烯改性异氰酸酯基聚酰亚胺薄膜的制备及机械、电学性能研究

摘要 为同步提高聚酰亚胺（PI）薄膜的机械性能和导电性，通过原位聚合制备了还原氧化石墨烯（rGO）改性的具有优异机械、导电和抗静电性能的PI薄膜。根据异氰酸酯基团和 rGO 片上羟基之间的反应，实现了 rGO 和 PI 基质之间的有效化学键合。它们在 PI 薄膜中实现了优异的相容性和均匀分散，并提供了与 PI 基质的强界面相互作用。测试结果表明，随着 rGO 剂量的增加，rGO 和 PI 基质之间形成越来越多的基团。在 0.7 wt% 的 rGO 剂量下，薄膜的拉伸强度和弹性模量分别增加到 103.12 MPa 和 3.90 GPa 的最大值。与由酸酐和异氰酸酯合成的纯 PI 薄膜相比，它们分别提高了约 74% 和 65%。此外，薄膜的表面和体积电阻率随着 rGO 剂量的增加而降低。薄膜的表面电阻率可降低至 1.232×107 Ω，而 rGO 用量仅为 1.0 wt%。与纯PI薄膜相比，它提高了大约九个数量级，符合抗静电薄膜材料的标准。100 Hz 时的介电常数达到 4.808（与纯 PI 薄膜相比增加了约 85%）。这些结果表明，通过引入 rGO，PI 薄膜的机械性能和电导率同步提高。本发明将进一步推动PI薄膜在电子封装领域的广泛应用。下载 : 下载高分辨率图像 (70KB) 下载 :