Ultraviolet (UV) photodetector has attracted extensive interests due to its wide-ranging applications from defense technology to optical communications. The use of wide bandgap metal oxide semiconductor materials is of great interest in the development of UV photodetector due to their unique electronic and optical properties. In this work, deep UV photodetector based on NiO/β-Ga2O3 heterojunction was developed and investigated. The β-Ga2O3 layer was prepared by magnetron sputtering and exhibited selective orientation along the family of ([Formula: see text] 01) crystal plane after annealing. The photodetector demonstrated good performance with a high responsivity (R) of 27.43 AW-1 under a 245-nm illumination (27 μWcm-2) and the maximum detectivity (D*) of 3.14 × 1012 cmHz1/2 W-1, which was attributed to the p-NiO/n-β-Ga2O3 heterojunction.

中文翻译：

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基于NiO /β-Ga2O3异质结的高性能深紫外光电探测器。

紫外线（UV）光电探测器由于其从国防技术到光通信的广泛应用而引起了广泛的兴趣。宽带隙金属氧化物半导体材料的使用由于其独特的电子和光学特性而在紫外光电检测器的开发中引起了极大的兴趣。在这项工作中，开发和研究了基于NiO /β-Ga2O3异质结的深紫外光电探测器。β-Ga2 O 3层是通过磁控溅射制备的，并且在退火之后沿着（[式：参见文本] 01）晶面族表现出选择性取向。该光电探测器在245 nm光照（27μWcm-2）下具有27.43 AW-1的高响应度（R）和3.14×1012 cmHz1 / 2 W-1的最大探测率（D *），显示出良好的性能。归因于p-NiO /n-β-Ga2O3异质结。