Abstract This work reports the structure-property relationship of sol gel synthesized Zn1.5+xSn1.5-xO4 films using acetylacetone as precursor solvent and stabilizer. These samples were characterized by using X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), Raman spectroscopy, optical spectroscopy and Hall measurements. XRD study reveals the preferentially grown along (311) with a change in its intensity for different compositions in Zn-Sn-O system. The surface morphology varies with composition has been observed in both SEM and AFM studies. The dominant Raman active modes were observed at 556 and 667 cm−1 corresponding to F2g and A1g modes respectively of Zn2SnO4 system. The optical gap varies between 3.85 eV to 3.96 eV and defect related emission spectra dominate the luminescence characteristics for the present system. The minimum electrical resistivity 8.4 × 10−3 Ω-cm and maximum figure of merit of 0.09 Ω−1 has been found for Zn2.25Sn0.75O4 films. These results show their suitability for fabrication of transparent conductors and other sensing device applications.

中文翻译：

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用于光电应用的溶胶-凝胶衍生的 Zn1.5+xSn1.5-xO4 纳米结构薄膜的结构、光学和电学性能

摘要 本文报道了以乙酰丙酮为前驱体溶剂和稳定剂溶胶凝胶合成的Zn1.5+xSn1.5-xO4薄膜的结构-性能关系。这些样品通过使用 X 射线衍射 (XRD)、扫描电子显微镜 (SEM)、原子力显微镜 (AFM)、拉曼光谱、光学光谱和霍尔测量进行表征。XRD 研究揭示了 Zn-Sn-O 系统中不同成分的优先沿（311）生长，其强度发生变化。在 SEM 和 AFM 研究中都观察到了表面形态随成分而变化。在 556 和 667 cm-1 处观察到主要的拉曼有源模式，分别对应于 Zn2SnO4 系统的 F2g 和 A1g 模式。光学间隙在 3.85 eV 到 3 之间变化。96 eV 和缺陷相关的发射光谱支配着本系统的发光特性。已发现 Zn2.25Sn0.75O4 薄膜的最小电阻率为 8.4 × 10-3 Ω-cm，最大品质因数为 0.09 Ω-1。这些结果表明它们适用于制造透明导体和其他传感设备应用。