Abstracts A ferroelectric polarization field electric-double-layer transistor based on the PbZr0·2Ti0·8O3 (PZT)/Nd0.3Sm0.25Sr0·45MnO3 (NSSMO) structure gated by ionic-liquid was established. The electrostatic modulation on the NSSMO channel was performed by applying electric field, while the respective non-volatile field effect upon the polarization field of PZT was investigated. Interestingly, a nonvolatile modulation on the resistance of NSSMO channel was observed, depending on the ferroelectric polarization field from PZT layer. Moreover, a large modulation of electrical conductivity of the NSSMO channel was achieved when applying a bias voltage of +3 V. This result indicates that a high nonvolatile electrostatic effect can be achieved in complex oxides devices under ferroelectric polarization field.

中文翻译：

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铁电体 PbZr0·2Ti0·8O3 /Nd0.3Sm0.25Sr0·45MnO3 液栅双电层晶体管电阻的高非易失性调制

摘要 建立了一种离子液体门控的基于PbZr0·2Ti0·8O3 (PZT)/Nd0.3Sm0.25Sr0·45MnO3 (NSSMO)结构的铁电极化场双电层晶体管。通过施加电场对 NSSMO 通道进行静电调制，同时研究了各自的非易失性场效应对 PZT 极化场的影响。有趣的是，观察到 NSSMO 通道电阻的非易失性调制，这取决于来自 PZT 层的铁电极化场。此外，当施加 +3 V 的偏置电压时，NSSMO 通道的电导率实现了较大的调制。该结果表明，在铁电极极化场下的复杂氧化物器件中可以实现高非易失性静电效应。