Abstract In this work, we adapted the growth process of carbon-mediated epitaxy from Ge and SiGe layers on Si(0 0 1) for layers on Si(1 1 1). Using atomic force microscopy, it was possible to measure a surface roughness of less than 1 nm for all samples grown with a C submonolayer. The degree of relaxation and Ge content of the layers was obtained by X-ray diffraction in skew geometry due to the low thickness of the layers. The layers are between 20 nm and 40 nm thick and fully relaxed with a Ge content between 0.5 x 1 . By monitoring the growth process with RHEED, it was shown that the layers exhibit a c ( 2 × 8 ) reconstruction.

中文翻译：

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通过碳介导外延生长的 Si(111) 衬底上的富锗 SiGe 薄层的分析

摘要 在这项工作中，我们将 Si(0 0 1) 上的 Ge 和 SiGe 层的碳介导外延生长过程调整为 Si(1 1 1) 上的层。使用原子力显微镜，可以测量所有用 C 亚单层生长的样品的表面粗糙度小于 1 nm。由于层的低厚度，层的弛豫度和Ge含量通过斜几何中的X射线衍射获得。这些层的厚度在 20 nm 到 40 nm 之间，并且完全松弛，Ge 含量在 0.5 x 1 之间。通过用 RHEED 监测生长过程，表明这些层表现出 ac ( 2 × 8 ) 重建。