Abstract We report on the structural properties of MgO films deposited on GaN templates on sapphire substrates via atomic layer deposition (ALD). Analysis of the crystal quality and structure as a function of surface treatment and growth temperature are presented. Our results indicate deposition temperatures greater than 250 °C are preferable for achieving a high quality MgO thin film. Rotational scans of the samples show a six-fold symmetry at all deposition temperatures, indicating the existence of two rotational symmetric MgO crystal domains on the GaN surface, which were confirmed using electron backscatter diffraction.

中文翻译：

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通过热原子层沉积在 GaN 上的 MgO 外延的表面预处理和沉积温度依赖性

摘要 我们报告了通过原子层沉积 (ALD) 在蓝宝石衬底上的 GaN 模板上沉积的 MgO 薄膜的结构特性。介绍了作为表面处理和生长温度函数的晶体质量和结构的分析。我们的结果表明沉积温度大于 250 °C 是获得高质量 MgO 薄膜的首选。样品的旋转扫描显示在所有沉积温度下均具有六倍对称性，表明 GaN 表面存在两个旋转对称的 MgO 晶体域，这通过电子背散射衍射得到证实。