当前位置: X-MOL 学术J. Cryst. Growth › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Surface Pretreatment and Deposition Temperature Dependence of MgO Epitaxy on GaN by Thermal Atomic Layer Deposition
Journal of Crystal Growth ( IF 1.7 ) Pub Date : 2020-04-01 , DOI: 10.1016/j.jcrysgro.2020.125568
Justin C. Goodrich , Thomas G. Farinha , Ling Ju , Alexandra J. Howzen , Animesh Kundu , Onoriode N. Ogidi-Ekoko , Jonathan J. Wierer , Nelson Tansu , Nicholas C. Strandwitz

Abstract We report on the structural properties of MgO films deposited on GaN templates on sapphire substrates via atomic layer deposition (ALD). Analysis of the crystal quality and structure as a function of surface treatment and growth temperature are presented. Our results indicate deposition temperatures greater than 250 °C are preferable for achieving a high quality MgO thin film. Rotational scans of the samples show a six-fold symmetry at all deposition temperatures, indicating the existence of two rotational symmetric MgO crystal domains on the GaN surface, which were confirmed using electron backscatter diffraction.

中文翻译:

通过热原子层沉积在 GaN 上的 MgO 外延的表面预处理和沉积温度依赖性

摘要 我们报告了通过原子层沉积 (ALD) 在蓝宝石衬底上的 GaN 模板上沉积的 MgO 薄膜的结构特性。介绍了作为表面处理和生长温度函数的晶体质量和结构的分析。我们的结果表明沉积温度大于 250 °C 是获得高质量 MgO 薄膜的首选。样品的旋转扫描显示在所有沉积温度下均具有六倍对称性,表明 GaN 表面存在两个旋转对称的 MgO 晶体域,这通过电子背散射衍射得到证实。
更新日期:2020-04-01
down
wechat
bug