Abstract KTN single crystals have some excellent optoelectronic properties and it’s been difficult to manufacture. This paper analyzes the applicable and suitable growth process parameters for KTN crystal, and the influence of Cu-doping on crystal structure and processibility. Large-sized and high-quality KTa0.65Nb0.35O3 crystals with different Cu-doping contents have been grown by the Czochralski method. The results reveal that lattice parameters increase slightly along with the increase of Cu-doping in KTN crystals. And 1.5 mol% of Cu doped KTN crystal has higher hardness, larger density and better thermostability than pure, 1 mol% and 3 mol% of Cu doped crystals due to its fine quality and no macroscopic defects during growth process.

中文翻译：

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KTa0.65Nb0.35O3单晶的生长过程及Cu掺杂的影响

摘要 KTN单晶具有优良的光电性能，但制造难度大。本文分析了KTN晶体的适用和适宜的生长工艺参数，以及Cu掺杂对晶体结构和可加工性的影响。已经通过直拉法生长了具有不同Cu掺杂量的大尺寸和高质量的KTa0.65Nb0.35O3晶体。结果表明，随着KTN晶体中Cu掺杂的增加，晶格参数略有增加。1.5 mol% 的 Cu 掺杂 KTN 晶体由于其优良的品质和生长过程中没有宏观缺陷，比纯的 1 mol% 和 3 mol% 的 Cu 掺杂晶体具有更高的硬度、更大的密度和更好的热稳定性。