Abstract Cation substitution has an important impact on the power conversion efficiency (PCE) of Cu2ZnSn(S,Se)4 (CZTSSe) solar cells. Herein, a significant PCE enhancement of flexible indium-doped CZTSSe solar cells has been achieved by partially substituting Sn4+ with In3+. Systematic measurements indicate that In doping in CZTSSe film effectively improves the crystallinity and carrier concentration of the absorber layer. Meanwhile, the treatment reduces interface recombination and band tailing by passivating deep defects and increases the open-circuit voltage (Voc) of the solar cells. By physical analysis, the key parameters for the solar cell diode such as A, J0, Rs and Rsh are significantly improved after In-doping, indicating better PN junction quality. Under the optimal In-doping (x = In/(Sn + In) = 9%), the flexible Cu2ZnSn1-xInx(S,Se)4 solar cell has been successfully obtained with the best efficiency of 7.19% and the Voc enhancement of 62 mV due to reduced Voc deficit and band tailing.

中文翻译：

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来自 In-doping 技术的高效柔性 Mo 箔基 Cu2ZnSn(S,Se)4 太阳能电池

摘要 阳离子取代对Cu2ZnSn(S,Se)4 (CZTSSe)太阳能电池的功率转换效率(PCE)有重要影响。在此，通过用 In3+ 部分替代 Sn4+ 实现了柔性掺铟 CZTSSe 太阳能电池的 PCE 显着增强。系统测量表明，在 CZTSSe 薄膜中掺杂 In 有效地提高了吸收层的结晶度和载流子浓度。同时，该处理通过钝化深缺陷来减少界面复合和带拖尾，并增加太阳能电池的开路电压（Voc）。通过物理分析，In-doping后太阳能电池二极管的A、J0、Rs、Rsh等关键参数得到显着改善，PN结质量更好。在最佳 In-doping (x = In/(Sn + In) = 9%) 下，柔性 Cu2ZnSn1-xInx(S,