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Photoluminescent properties of Tb-doped SrMoO4 thin films deposited on quartz substrates
Solid State Sciences ( IF 3.4 ) Pub Date : 2020-03-01 , DOI: 10.1016/j.solidstatesciences.2020.106155
Shinho Cho

Abstract Tb3+-doped SrMoO4 thin films were deposited by radio-frequency magnetron sputtering at different growth temperatures. The X-ray diffraction spectra revealed a tetragonal SrMoO4 structure with the main peak occurring at the (112) plane, regardless of the growth temperature. The average crystalline particle size was determined to be 110 nm using scanning electron microscopy, and cobble-like shapes were observed for all the thin films. The highest average transmittance of 87.2% in the wavelength range of 400–1100 nm was observed for a thin film deposited at a growth temperature of 100 °C, where the optical band gap energy was found to be 4.38 eV. The emission spectra of SrMoO4:Tb3+ thin films under excitation at 273 nm exhibited a major emission band at 549 nm and four weak emission bands at 469, 493, 591, and 625 nm. The strongest emission was green at 549 nm, arising from the 5D4→7F5 magnetic dipole transition. The intensity of the magnetic dipole transition is greater than that of the 5D4→7F6 (493 nm) electrical dipole transition, indicating that the Tb3+ ions in the host lattice occupy sites with inversion symmetry. These results suggest that the optimum green emission can be realized by modulating the growth temperature.

中文翻译:

沉积在石英衬底上的 Tb 掺杂 SrMoO4 薄膜的光致发光特性

摘要 通过射频磁控溅射在不同生长温度下沉积了Tb3+掺杂的SrMoO4薄膜。无论生长温度如何,X 射线衍射光谱都显示出四方 SrMoO4 结构,主峰出现在 (112) 面。使用扫描电子显微镜确定平均结晶粒径为 110 nm,所有薄膜均观察到类似鹅卵石的形状。对于在 100°C 生长温度下沉积的薄膜,观察到在 400-1100 nm 波长范围内的最高平均透射率为 87.2%,发现光学带隙能量为 4.38 eV。SrMoO4:Tb3+ 薄膜在 273 nm 激发下的发射光谱在 549 nm 处显示出主要发射带,在 469、493、591 和 625 nm 处显示出四个弱发射带。最强的发射是 549 nm 处的绿色,由 5D4→7F5 磁偶极跃迁引起。磁偶极跃迁的强度大于 5D4→7F6(493 nm)电偶极跃迁的强度,表明主晶格中的 Tb3+ 离子占据了反转对称的位置。这些结果表明,通过调节生长温度可以实现最佳的绿色发射。
更新日期:2020-03-01
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