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Synthesis and optoelectronics of mixed-dimensional Bi/Te binary heterostructures.
Nanoscale Horizons ( IF 8.0 ) Pub Date : 2020-02-27 , DOI: 10.1039/c9nh00805e
Ye Zhang 1 , Jia Guo , Yiguo Xu , Weichun Huang , Chao Li , Lingfeng Gao , Leiming Wu , Zhe Shi , Chunyang Ma , Yanqi Ge , Xiuwen Zhang , Han Zhang
Affiliation  

Mixed-dimensional binary heterostructures, especially 0D/2D heterostructures, have attracted significant attention due to their unique physical properties. In this contribution, 0D bismuth quantum dots (Bi QDs, VA) are immobilized onto 2D Te nanosheets (Te NSs, VIA) to prepare Bi QDs/Te NSs binary heterostructures (Bi/Te) through a facile and cost-effective hydrothermal method. The results from both experiments and density functional theory (DFT) calculations demonstrate the enhanced photo-response behaviors of Bi/Te-based photoelectrochemical (PEC)-type photodetectors (PDs). The as-prepared PDs exhibit a high photocurrent of 18.21 μA cm-2, significantly higher than those of previously reported pristine Bi QD and Te NS-based PDs. The PDs are further demonstrated to have excellent self-power capability and long-term stability over 30 days. Additionally, the obtained 786 fs pulse output signal in the telecommunications band reveals the great potential of Bi/Te for ultrafast photonic devices. It is believed that such VA/VIA binary heterostructures provide opportunities for developing multifunctional optoelectronic devices for nano-science applications.

中文翻译:

混合尺寸Bi / Te二元异质结构的合成和光电学。

混合尺寸的二元异质结构,尤其是0D / 2D异质结构,由于其独特的物理特性而备受关注。在此贡献中,将0D铋量子点(Bi QDs,VA)固定在2D Te纳米片(Te NSs,VIA)上,通过一种简便且经济高效的水热方法制备Bi QDs / Te NSs二元异质结构(Bi / Te)。来自实验和密度泛函理论(DFT)计算的结果都证明了基于Bi / Te的光电化学(PEC)型光电探测器(PDs)的增强的光响应行为。如此制备的PD表现出18.21μAcm-2的高光电流,显着高于先前报道的原始Bi QD和基于Te NS的PD。PD还被证明具有出色的自供电能力和30天的长期稳定性。此外,在电信频段中获得的786 fs脉冲输出信号揭示了Bi / Te对于超快光子器件的巨大潜力。相信这样的VA / VIA二元异质结构为开发用于纳米科学应用的多功能光电器件提供了机会。
更新日期:2020-02-20
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