Abstract Copper nitride (Cu3N) thin films were deposited on Soda-lime glass substrates by reactive radio-frequency (rf) magnetron sputtering in a pure nitrogen ambient, with different bias voltages (i.e., 0, 50, 150 and 250 V) applied to the substrate holder. The effects of DC bias voltage on the structural, morphological and optical properties of the Cu3N thin films were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), UV–Vis spectroscopy and photoluminescence (PL) spectroscopy. XRD spectra show the single-phase polycrystalline structure of Cu3N with (100) preferential orientation. Moreover, the grain sizes, ranging from 36 nm to 19 nm, decreases with the increase in the substrate bias voltage. The AFM images show that the films become more uniform with the increase in bias voltage. Using the Tauc plot, the optical band gaps of the films were calculated, ranging from 0.71 to 1.42 eV. Furthermore, the indirect optical band gap and the optical transmittance increase with the increase in the bias voltage. The PL spectroscopy shows a shift to the lower wavelength associated with an increase in the bias voltage.

中文翻译：

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偏压对纯氮气氛下反应射频磁控溅射沉积Cu3N薄膜光学和结构特性的影响

摘要 氮化铜 (Cu3N) 薄膜通过反应射频 (rf) 磁控溅射在纯氮环境中沉积在钠钙玻璃基板上，施加不同的偏置电压（即 0、50、150 和 250 V）到基板支架。通过X射线衍射（XRD）、扫描电子显微镜（SEM）、原子力显微镜（AFM）、紫外-可见光谱和光致发光研究了直流偏置电压对Cu3N薄膜结构、形态和光学性质的影响(PL) 光谱。XRD 谱显示了具有 (100) 优先取向的 Cu3N 的单相多晶结构。此外，晶粒尺寸从 36 nm 到 19 nm，随着衬底偏置电压的增加而减小。AFM 图像显示随着偏置电压的增加，薄膜变得更加均匀。使用 Tauc 图，计算出薄膜的光学带隙，范围从 0.71 到 1.42 eV。此外，间接光学带隙和光学透射率随着偏置电压的增加而增加。PL 光谱显示与偏压增加相关的向较低波长的移动。