We describe the use of a cross-shaped platinum marker deposited using electron-beam-induced deposition (EBID) in a focused ion beam - scanning electron microscope (FIB-SEM) system to facilitate site-specific preparation of a TEM foil containing a trench defect in an InGaN/GaN multiple quantum well structure. The defect feature is less than 100 nm wide at the surface. The marker is deposited prior to the deposition of a protective platinum strap (also by EBID) with the centre of the cross indicating the location of the feature of interest, while the arms of the square cross make an acute angle of 45° with the strap's long axis. During the ion-beam thinning process, the marker may be viewed in cross-section from both sides of the sample alternately, and the coming together of the features relating to the arms of the cross indicates increasing proximity to the feature of interest. Although this approach does allow increased precision in locating the region of interest during thinning, it also increases the time required to complete the sample preparation. Hence, this method is particularly well suited to directly correlated multi-microscopy investigations in previously characterised material where high yield and the precise location are more important than preparation time. In addition to TEM lamella preparation, this method could equally be useful for preparing site-specific atom probe tomography (APT) samples.

中文翻译：

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使用聚焦离子束技术制备位点特异性透射电子显微镜薄片的十字形标记

我们描述了在聚焦离子束扫描电子显微镜 (FIB-SEM) 系统中使用电子束诱导沉积 (EBID) 沉积的十字形铂标记的使用，以促进包含沟槽的 TEM 箔的特定位置制备InGaN/GaN 多量子阱结构中的缺陷。缺陷特征的表面宽度小于 100 nm。在沉积保护性铂金带（也由 EBID）之前沉积标记，十字的中心指示感兴趣特征的位置，而方形十字的臂与带的边缘形成 45° 的锐角长轴。在离子束细化过程中，可以从样品的两侧交替观察标记物的横截面，并且与十字臂相关的特征的聚集表明与感兴趣的特征越来越接近。虽然这种方法确实可以提高打薄过程中感兴趣区域的定位精度，但它也增加了完成样品制备所需的时间。因此，该方法特别适用于在先前表征的材料中进行直接关联的多显微镜研究，其中高产量和精确位置比准备时间更重要。除了 TEM 薄片制备外，该方法同样可用于制备位点特定原子探针断层扫描 (APT) 样品。它还增加了完成样品制备所需的时间。因此，该方法特别适用于在先前表征的材料中进行直接关联的多显微镜研究，其中高产量和精确位置比准备时间更重要。除了 TEM 薄片制备外，该方法同样可用于制备位点特定原子探针断层扫描 (APT) 样品。它还增加了完成样品制备所需的时间。因此，该方法特别适用于在先前表征的材料中进行直接关联的多显微镜研究，其中高产量和精确位置比准备时间更重要。除了 TEM 薄片制备外，该方法同样可用于制备位点特定原子探针断层扫描 (APT) 样品。