Abstract Herein we report the studies on the GaBiAs terahertz emitters. The molecular beam epitaxy grown thin films were subjected to structural and optical characterization. Inhomogeneity of Bi concentration in the samples is confirmed by XRD, PL and EDS studies. Investigations on the generation characteristics of the fabricated bow-tie photoconductive antennas were carried out via the Fourier Transform Infrared Spectroscopy. The collected data indicate a pattern of change in the shape of the spectra with increasing bismuth concentration, namely, a sharp drop in the low-frequency part (0.1–0.2 THz) simultaneously with a noticeable increase in intensity in the range 0.3–1 THz with a pronounced maximum at frequencies of ~0.4 THz. The deterioration of the THz power to average photocurrent ratio can be explained by a general decrease in the electron mobility, caused both by a large number of structural defects and by a large local heating of the crystal.

中文翻译：

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长波长光纤激光器泵浦太赫兹发射器 GaAsBi 外延层的研究

摘要 在此我们报告了 GaBiAs 太赫兹发射器的研究。对分子束外延生长的薄膜进行结构和光学表征。XRD、PL 和 EDS 研究证实了样品中 Bi 浓度的不均匀性。通过傅里叶变换红外光谱对制造的领结光电导天线的产生特性进行了研究。收集到的数据表明，随着铋浓度的增加，光谱形状发生了变化，即低频部分（0.1-0.2 THz）急剧下降，同时强度在 0.3-1 THz 范围内显着增加在~0.4 THz 的频率处具有明显的最大值。