Abstract The effects of thermal treatment and Aluminum Oxide [Al2O3] spacer thickness on the de-excitation traces and cross-relaxation among Thulium(III) ions [Tm3+], which prominently impact on the electroluminescence (EL) from different characteristic transitions inside the devices based on Aluminum Oxide upon Thulium(III) Oxide [[Al2O3]/[Tm2O3]] nanolaminate thin solid films, were investigated. The suitable annealing temperatures (Ta) for activating [Tm3+] ions was between 600.0 °C and 800.0 °C, while higher annealing temperatures lead to the reduced EL intensity and life time, resulting from the formation of Thulium Oxide nonstoichiometric compound [TmOx] clusters or agglomerations. All phenomena confirm the critical [Al2O3] spacer thickness of around 3.0 nm, concerning both non-radioactive interaction among excited [Tm3+] ions derived from Forster mode and the acceleration distance for the injected electrons in [Al2O3] matrix.

中文翻译：

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退火温度和间隔层厚度对氧化铝在氧化铥（III）纳米层压硅基电致发光和光电子器件上的交叉弛豫和衰减动力学的特性

摘要 热处理和氧化铝 [Al2O3] 间隔层厚度对铥 (III) 离子 [Tm3+] 之间的去激发迹线和交叉弛豫的影响，这对器件内部不同特征跃迁的电致发光 (EL) 有显着影响基于氧化铝和铥 (III) 氧化物 [[Al2O3]/[Tm2O3]] 纳米层压固体薄膜，进行了研究。用于激活 [Tm3+] 离子的合适退火温度 (Ta) 介于 600.0 °C 和 800.0 °C 之间，而较高的退火温度会导致 EL 强度和寿命降低，这是由于形成了氧化铥非化学计量化合物 [TmOx] 簇或聚集。所有现象都证实了大约 3.0 nm 的关键 [Al2O3] 间隔层厚度，