Abstract Strong red light emission from silicon oxynitride-based (SiOxNy-based) light-emitting diodes (LEDs) was investigated. The introduction of dense Si quantum dots (Si QDs) into SiOxNy not only increases carrier injection efficiency but also results in a significant enhancement of more than 300% in the light emission efficiency compared with SiOxNy-based LEDs without Si QDs. Moreover, the efficiency droop phenomenon is remarkably suppressed in the SiOxNy-based LED containing dense Si QDs. Analysis of the dominant recombination process indicates that the improved performance of the SiOxNy-based LEDs results from the increased bimolecular radiative recombination probability .

中文翻译：

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来自密集硅量子点基氮氧化硅发光二极管的增强红光发射，降低效率下降

摘要 研究了氮氧化硅基（SiOxNy 基）发光二极管 (LED) 的强红光发射。将致密的 Si 量子点 (Si QD) 引入 SiOxNy 不仅提高了载流子注入效率，而且与没有 Si QD 的基于 SiOxNy 的 LED 相比，发光效率显着提高了 300% 以上。此外，在含有致密 Si QD 的 SiOxNy 基 LED 中，效率下降现象得到显着抑制。对主要复合过程的分析表明，基于 SiOxNy 的 LED 性能的提高是双分子辐射复合概率增加的结果。