Abstract The undoped and Ce-doped MgAl2O4 single crystals were synthesized by the floating zone method equipped with four xenon arc lamps, and the photoluminescence (PL), scintillation, and dosimetric properties were investigated. The Ce-doped crystals showed PL emission peaks at around 420 and 720 nm. The former was ascribed to the 5 d-4f transition of Ce3+ ion, and the latter was ascribed Mg deficiency. The PL decay time profiles of the Ce-doped crystals exhibited the fast decay, and the decay time constants were the typical value of others Ce-doped materials. Thus, the decay time constants were attributed to the 5 d-4f transitions of Ce3+ ion. In addition, optically-stimulated luminescence (OSL) signals could be detected in all the crystals when the stimulation wavelength was 470 nm. The OSL dose response functions showed linearly proportional relationship from 10 to 1000 mGy in all the Ce-doped crystals. The thermally-stimulated luminescence (TSL) glow curves exhibit three peaks due to antisite of Al3+ ion, V center and antisite of Mg2+ ion. All the Ce-doped crystals showed improved TSL intensity and dose response sensitivity compared the undoped crystal. The 0.2 and 1% Ce-doped crystals showed linearly response at the dose range of the 0.1–1000 mGy.

中文翻译：

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Ce掺杂的MgAl2O4单晶的闪烁和剂量学特性

摘要 采用四个氙弧灯的浮区法合成了未掺杂和掺杂Ce的MgAl2O4单晶，并研究了其光致发光（PL）、闪烁和剂量学特性。Ce 掺杂的晶体在 420 和 720 nm 附近显示出 PL 发射峰。前者归因于Ce3+离子的5d-4f跃迁，后者归因于Mg缺乏。Ce掺杂晶体的PL衰减时间曲线表现出快速衰减，并且衰减时间常数是其他Ce掺杂材料的典型值。因此，衰减时间常数归因于 Ce3+ 离子的 5 d-4f 跃迁。此外，当刺激波长为 470 nm 时，可以在所有晶体中检测到光刺激发光 (OSL) 信号。OSL 剂量响应函数在所有 Ce 掺杂晶体中显示出从 10 到 1000 mGy 的线性比例关系。由于 Al3+ 离子的反位、V 中心和 Mg2+ 离子的反位，热激发发光 (TSL) 辉光曲线表现出三个峰。与未掺杂的晶体相比，所有 Ce 掺杂的晶体都显示出改善的 TSL 强度和剂量响应敏感性。0.2% 和 1% Ce 掺杂的晶体在 0.1-1000 mGy 的剂量范围内表现出线性响应。