Abstract In this work, the potential of ultrathin pure and copper-doped CdSe nanoplatelets (NPLs) for white-light generation is studied. It is shown that thin populations of CdSe NPLs synthesized at relatively low growth temperatures generate white-light due to combining the band-edge and broad trap-assisted emissions. It is found that the luminescence and photometric properties of the CdSe NPLs can be tailored in a wide range simply by changing their growth temperature. As-grown CdSe NPLs generate white light with a color rendering index (CRI) as high as 75 and color coordinates of (0.31, 0.33) at a correlated color temperature (CCT) of 6438K. Further, to avoid the well-known re-absorption problem and increase photoluminescence quantum yield (PL QY), the thinnest population of CdSe NPLs is doped with copper. It is demonstrated that by copper-doping, the band-edge emission of ultrathin CdSe NPLs can be fully suppressed. Copper-induced emission covers a wavelength range of 400–700nm with PL QY reaching values up to 95%. By integrating the undoped and copper-doped ultrathin CdSe NPLs whith a UV chip, light-emitting devices (LED) emitting within the white-light region of the CIE 1931 chromaticity diagram are fabricated.

中文翻译：

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用于产生白光的高发光掺铜超薄 CdSe 纳米片

摘要 在这项工作中，研究了超薄纯铜掺杂 CdSe 纳米片 (NPL) 产生白光的潜力。结果表明，由于结合了带边和宽陷阱辅助发射，在相对较低的生长温度下合成的 CdSe NPL 的薄群会产生白光。发现 CdSe NPLs 的发光和光度特性可以通过改变它们的生长温度在很宽的范围内进行调整。生长的 CdSe NPL 产生白光，其显色指数 (CRI) 高达 75，色坐标为 (0.31, 0.33)，相关色温 (CCT) 为 6438K。此外，为了避免众所周知的重吸收问题并提高光致发光量子产率 (PL QY)，最薄的 CdSe NPL 群掺杂有铜。结果表明，通过铜掺杂，可以完全抑制超薄 CdSe NPL 的带边发射。铜诱导发射覆盖 400-700nm 的波长范围，PL QY 达到高达 95% 的值。通过将未掺杂和铜掺杂的超薄 CdSe NPL 与 UV 芯片集成，制造在 CIE 1931 色度图的白光区域内发射的发光器件 (LED)。