Abstract The effects of rapid thermal annealing on the structural and optical properties of InGaN/GaN quantum disk-in-nanowire heterostructure arrays have been investigated. Temperature-dependent and time-resolved photoluminescence measurements were complemented by x-ray photoemission spectroscopy. It was observed that annealing, in general, increased the non-radiative recombination rate in the InGaN quantum disk regions and consequently lowered the internal quantum efficiency and reduced the average carrier lifetime. These are due to an increase in the density of surface states associated with –O and –OH bonds in the disk region and possible enhancement of non-radiative recombination due to In segregation.

中文翻译：

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InGaN/GaN量子盘-in-GaN纳米线阵列中快速热退火的影响

摘要 研究了快速热退火对 InGaN/GaN 量子盘纳米线异质结构阵列的结构和光学特性的影响。温度相关和时间分辨的光致发光测量得到了 X 射线光发射光谱的补充。据观察，退火通常会增加 InGaN 量子盘区域中的非辐射复合率，从而降低内部量子效率并降低平均载流子寿命。这是由于盘区中与 -O 和 -OH 键相关的表面态密度增加，以及因 In 偏析可能增强非辐射复合。