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A plausible impact on the role of pulses in anodized TiO 2 nanotube arrays enhancing Ti 3+ defects
Journal of Nanoparticle Research ( IF 2.1 ) Pub Date : 2020-02-19 , DOI: 10.1007/s11051-020-4780-2
Priya Ranjan Dev , T. Manovah David , S.J. Samuel Justin , P. Wilson , A. Palaniappan

This paper presents a systematic investigation on the growth of TiO2 nanotubes (NTs) by modifying the continuity in the applied potential through conventional one-step electrochemical anodization (CEA), paused electrochemical anodization (PEA), two-step electrochemical anodization (TEA), and pulsed electrochemical anodization (PLA). The essence of this research pertains to understanding the significance of surface solid fraction factor (ψ) in relation to the density of surface defects. Additionally, in order to comprehend and incorporate the influence of cracks on surface defects and carrier transport, the reported ψ has been modified for the first time. Moreover, this attempt involves the use of H2O2 as an electrolytic oxidizer for the first time in PEA, TEA, and PLA techniques to explore the possibility in creating ripple free NTs. UV-Vis diffuse reflectance spectroscopy (UV-Vis DRS), photoluminescence, and X-ray photoelectron spectroscopy (XPS) provided insights into the band gap and quantification of surface defects for NTs anodized via continuous and pulsed modes. The effect of voltage continuity on % porosity of the TiO2 NT arrays was investigated. Electrochemical impedance spectroscopy (EIS) and cyclic voltammetry (CV) techniques were also carried out to determine the electrical properties of the prepared TiO2 NT arrays.



中文翻译:

对脉冲在阳极氧化TiO 2纳米管阵列中增强Ti 3+缺陷的作用的合理影响

本文通过常规的一步式电化学阳极氧化(CEA),间歇式电化学阳极氧化(PEA),两步电化学阳极氧化(TEA)通过改变施加电势的连续性,对TiO 2纳米管(NTs)的生长进行了系统的研究。,以及脉冲电化学阳极氧化(PLA)。这项研究的实质在于理解表面固体分数因子(ψ)与表面缺陷密度有关的重要性。此外,为了理解和合并裂纹对表面缺陷和载流子传输的影响,首次对所报道的ψ进行了修改。此外,该尝试涉及使用H 2 O 2。首次在PEA,TEA和PLA技术中用作电解氧化剂,以探索创建无波纹NT的可能性。UV-Vis漫反射光谱(UV-Vis DRS),光致发光和X射线光电子能谱(XPS)提供了对通过连续和脉冲模式阳极化的NT的带隙和表面缺陷定量的见解。研究了电压连续性对TiO 2 NT阵列的%孔隙率的影响。还进行了电化学阻抗谱(EIS)和循环伏安法(CV)技术以确定所制备的TiO 2 NT阵列的电性能。

更新日期:2020-02-19
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