Magnetic-field guided solvent vapor annealing for enhanced molecular alignment and carrier mobility of a semiconducting diketopyrrolopyrrole-based polymer,Journal of Materials Chemistry C

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Magnetic-field guided solvent vapor annealing for enhanced molecular alignment and carrier mobility of a semiconducting diketopyrrolopyrrole-based polymer
Journal of Materials Chemistry C ( IF 5.7 ) Pub Date : 2020/02/19 , DOI: 10.1039/c9tc05803f
Xuhua Xiao _{1,

2,

3,

4,

5} , Guoxing Pan _{1,

2,

3,

4,

5} , Tian Li _{1,

2,

3,

4,

5} , Songlin Su _{1,

2,

3,

4,

5} , Liangzheng Zhu _{1,

2,

3,

4,

5} , Xuebin Zhu _{4,

5,

6,

7} , Fapei Zhang _{1,

2,

3,

4,

5}

Affiliation

Controlling the molecular orientation of organic semiconductors is crucial to improving the performance of electronic devices. In this article, we describe a straightforward method to achieve large-area highly aligned films of a diketopyrrolopyrrole-bithiophene polymer (PDPP2TBT) by solvent vapor annealing (SVA) of the as-spun films under a high magnetic field. The structural characterizations disclose that the chain backbones of PDPP2TBT in the films are highly aligned to the applied magnetic field during SVA; meanwhile, the films exhibit high crystallinity. A mechanism is proposed to explain the magnetic alignment, based on the reformation of chain aggregates in the wet film exposed to solvent vapor. Field-effect transistors (FETs) based on the magnetically aligned PDPP2TBT films exhibit an enhancement of hole mobility (a maximum value of 1.56 cm² V⁻¹ s⁻¹) by a factor of 6 compared to the unaligned devices, as well as mobility anisotropy of three. Temperature-dependent FET mobility measurement reveals a remarkable lowering of thermally activated energy for carrier hopping in the aligned film. The results indicate the formation of a rapid intra-chain conduction pathway parallel to the chain alignment direction, which originates from the alignment-induced backbone extension and enhanced order of inter-chain packing.

中文翻译：

磁场引导的溶剂蒸汽退火，以增强基于半导体的基于二酮吡咯并吡咯的聚合物的分子排列和载流子迁移率

控制有机半导体的分子取向对改善电子设备的性能至关重要。在本文中，我们描述了一种简单的方法，可以通过在高磁场下对初纺薄膜进行溶剂蒸汽退火（SVA）来实现大面积高取向二酮吡咯并吡咯-联噻吩聚合物（PDPP2TBT）薄膜。结构特征表明，膜中PDPP2TBT的链主链与SVA期间施加的磁场高度对齐；同时，这些膜表现出高结晶度。提出了一种机理的解释，该机理基于暴露于溶剂蒸汽的湿膜中链状聚集体的重整。基于磁性排列的PDPP2TBT薄膜的场效应晶体管（FET）表现出增强的空穴迁移率（最大值为1.56 cm² V^-1 s^-1）是未对准器件的6倍，迁移率各向异性是3。随温度变化的FET迁移率测量结果表明，用于取向膜中载流子跳跃的热活化能显着降低。结果表明平行于链排列方向的快速链内传导途径的形成，其起源于排列诱导的主链延伸和链间堆积的增强顺序。

更新日期：2020-04-03

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