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Ultralow Electrical Hysteresis along with High Energy‐Storage Density in Lead‐Based Antiferroelectric Ceramics
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2020-02-19 , DOI: 10.1002/aelm.201901366 Kaiwei Huang 1 , Guanglong Ge 1 , Fei Yan 1 , Bo Shen 1 , Jiwei Zhai 1
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2020-02-19 , DOI: 10.1002/aelm.201901366 Kaiwei Huang 1 , Guanglong Ge 1 , Fei Yan 1 , Bo Shen 1 , Jiwei Zhai 1
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Antiferroelectric ceramics with extraordinary energy‐storage density have gained exponentially soaring attention for their applications in pulsed power capacitors. Nevertheless, high energy dissipation is a deficiency of antiferroelectric materials. The modulation of Ba/La‐doped (Pb0.91BaxLa0.06−2x/3)(Zr0.6Sn0.4)O3 (x = 0.015, 0.03, 0.045, 0.06) antiferroelectric ceramics is aimed at increasing the energy efficiency and obtaining an ideal energy storage density. The traditional solid‐state reaction is exploited for ceramics fabrication and all prepared samples exhibit an ultralow electrical hysteresis due to the local structural heterogeneity, as verified by Raman spectroscopy. Of particular importance is the fact that the (Pb0.91Ba0.045La0.03)(Zr0.6Sn0.4)O3 ceramic possesses an excellent recoverable energy storage density (Wrec = 8.16 J cm−3) and a remarkable energy efficiency (η = 92.1%) simultaneously under an electric field of 340 kV cm−1. Moreover, the corresponding ceramic exhibits a superior discharge current density (CD = 1498.6 A cm−2), a high level of power density (PD = 202.3 MW cm−3), and a nanosecond‐level discharge period (53 ns). This provides a promising antiferroelectric material for fabricating ceramic capacitors with excellent energy storage and high power characteristics.
中文翻译：
铅基反铁电陶瓷的超低电滞后性以及高储能密度
具有超高储能密度的反铁电陶瓷在脉冲功率电容器中的应用倍受关注。然而，高能量耗散是反铁电材料的不足。Ba / La掺杂（Pb 0.91 Ba x La 0.06−2 x / 3）（Zr 0.6 Sn 0.4）O 3（x= 0.015、0.03、0.045、0.06）反铁电陶瓷旨在提高能效并获得理想的储能密度。传统的固态反应被用于陶瓷制造，并且所有制备的样品由于局部结构异质性而表现出超低的电滞后，这已通过拉曼光谱法进行了验证。特别重要的是（Pb 0.91 Ba 0.045 La 0.03）（Zr 0.6 Sn 0.4）O 3陶瓷具有出色的可回收能量存储密度（W rec = 8.16 J cm -3））和在340 kV cm -1的电场下同时具有显着的能量效率（η= 92.1％）。此外，相应的陶瓷表现出优异的放电电流密度（C D = 1498.6 A cm -2），高水平的功率密度（P D = 202.3 MW cm -3）和纳秒级放电时间（53 ns） 。这提供了用于制造陶瓷电容器的有前途的反铁电材料，其具有优异的能量存储和高功率特性。
更新日期：2020-02-19
中文翻译：
铅基反铁电陶瓷的超低电滞后性以及高储能密度
具有超高储能密度的反铁电陶瓷在脉冲功率电容器中的应用倍受关注。然而，高能量耗散是反铁电材料的不足。Ba / La掺杂（Pb 0.91 Ba x La 0.06−2 x / 3）（Zr 0.6 Sn 0.4）O 3（x= 0.015、0.03、0.045、0.06）反铁电陶瓷旨在提高能效并获得理想的储能密度。传统的固态反应被用于陶瓷制造，并且所有制备的样品由于局部结构异质性而表现出超低的电滞后，这已通过拉曼光谱法进行了验证。特别重要的是（Pb 0.91 Ba 0.045 La 0.03）（Zr 0.6 Sn 0.4）O 3陶瓷具有出色的可回收能量存储密度（W rec = 8.16 J cm -3））和在340 kV cm -1的电场下同时具有显着的能量效率（η= 92.1％）。此外，相应的陶瓷表现出优异的放电电流密度（C D = 1498.6 A cm -2），高水平的功率密度（P D = 202.3 MW cm -3）和纳秒级放电时间（53 ns） 。这提供了用于制造陶瓷电容器的有前途的反铁电材料，其具有优异的能量存储和高功率特性。
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