GeTe is an important narrow band gap semiconductor material, which has found application in the fields of thermoelectricity, phase change storage as well as switch. However, it has not been studied for application in the field of photodetectors. Here, GeTe thin films were grown by magnetron sputtering and their material structure, optical and electrical properties were compared before and after annealing. High-performance photodetectors with detectivity of ${\sim}{{10}^{13}}$∼1013 Jones at 850 nm light were demonstrated. Thus the novel, to the best of our knowledge, application of GeTe in optoelectronic devices is reported in this work.

中文翻译：

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基于GeTe纳米膜的高性能红外光电探测器。

GeTe是一种重要的窄带隙半导体材料，已在热电，相变存储以及开关领域中得到应用。然而，尚未对其在光电检测器领域中的应用进行研究。在这里，通过磁控溅射法生长了GeTe薄膜，并比较了退火前后的材料结构，光学和电学性质。演示了在850 nm光下检测度为$ {\ sim} {{10} ^ {13}} $〜1013 Jones的高性能光电探测器。因此，据我们所知，这项工作报道了GeTe在光电器件中的应用。