The hollow regions of an anti-resonant fiber (ARF) offer an excellent template for the deposition of functional materials. When the optical properties of such materials can be modified via external stimuli, it offers a method to control the transmission properties of the fiber device. In this Letter, we show that the integration of a ${{\rm MoS}_2}$MoS2 film into the ARF voids allows the fiber to act as an electro-optical modulator. We record a maximum modulation depth of 3.5 dB at 744 nm, with an average insertion loss of 7.5 dB.

中文翻译：

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具有3.5 dB深度的复合材料抗谐振光纤电调制器。

抗谐振纤维（ARF）的中空区域为功能材料的沉积提供了极好的模板。当可以通过外部刺激改变此类材料的光学特性时，它提供了一种控制光纤设备传输特性的方法。在这封信中，我们证明了将$ {{\ rm MoS} _2} $ MoS2薄膜集成到ARF空隙中可以使光纤充当电光调制器。我们在744 nm处记录的最大调制深度为3.5 dB，平均插入损耗为7.5 dB。