We investigate the high-temperature characteristics of wafer-bonded silicon-on-insulator (SOI)-based Ge film with two different intermediate bonding layers. For an amorphous Ge (a-Ge) bonding layer, due to the crystallization of a-Ge, many gas bubbles appear at the bonded interface to form Ge pits on the SOI. When the wafer pairs are annealed at ⩾400 °C, new gas bubbles appear and merge, leading to cracking of the Ge film due to the fact that the new gas bubbles cannot be transferred sufficiently rapidly out of the bonded interface of two single-crystal materials. For an a-Ge/a-Si bonding layer, the porous a-Si can serve as a reservoir at the bonded interface to absorb the by-products. With increase in a-Si layer thickness, the gas bubble density decreases. New gas bubbles are not observed after annealing at 500 °C when a 30 nm thick a-Si layer is introduced. More importantly, the quality of the Ge film with an a-Ge/a-Si bonding layer significantly improves after post-annealing...

中文翻译：

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双中间键合层，用于制造具有优异高温特性的高质量绝缘体上硅基剥离Ge膜

我们研究了具有两个不同中间粘结层的晶片粘结的绝缘体上硅（SOI）基Ge薄膜的高温特性。对于非晶Ge（a-Ge）键合层，由于a-Ge的结晶，许多气泡出现在键合界面上，从而在SOI上形成Ge坑。当晶片对在⩾400°C下退火时，新的气泡出现并合并，由于新气泡不能足够迅速地从两个单晶的键合界面转移出而导致Ge膜破裂。材料。对于a-Ge / a-Si键合层，多孔a-Si可以用作键合界面处的储存器，以吸收副产物。随着a-Si层厚度的增加，气泡密度降低。当引入30 nm厚的非晶硅层在500°C退火后，未观察到新的气泡。更重要的是，经过a-Ge / a-Si键合层的Ge膜的质量在后退火后显着提高。