Nanoscale Au-ZnO heterostructures were fabricated on 4-in. SiO2/Si wafers by the atomic layer deposition (ALD) technique. Developed Au-ZnO heterostructures after post-deposition annealing at 250 °C were tested for amperometric hydrogen peroxide (H2O2) detection. The surface morphology and nanostructure of Au-ZnO heterostructures were examined by field emission scanning electron microscopy (FE-SEM), Raman spectroscopy, atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), etc. Additionally, the electrochemical behavior of Au-ZnO heterostructures towards H2O2 sensing under various conditions is assessed by chronoamperometry and electrochemical impedance spectroscopy (EIS). The results showed that ALD-fabricated Au-ZnO heterostructures exhibited one of the highest sensitivities of 0.53 μA μM-1 cm-2, the widest linear H2O2 detection range of 1.0 μM-120 mM, a low limit of detection (LOD) of 0.78 μM, excellent selectivity under the normal operation conditions, and great long-term stability. Utilization of the ALD deposition method opens up a unique opportunity for the improvement of the various capabilities of the devices based on Au-ZnO heterostructures for amperometric detection of different chemicals.

中文翻译：

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通过原子层沉积开发的纳米级 Au-ZnO 异质结构用于安培 H2O2 检测。


纳米级 Au-ZnO 异质结构在 4 英寸上制造。采用原子层沉积 (ALD) 技术制备 SiO2/Si 晶圆。开发的 Au-ZnO 异质结构在 250 °C 沉积后退火后进行了安培过氧化氢 (H2O2) 检测测试。通过场发射扫描电子显微镜（FE-SEM）、拉曼光谱、原子力显微镜（AFM）、X射线光电子能谱（XPS）等手段对Au-ZnO异质结构的表面形貌和纳米结构进行了研究。通过计时电流法和电化学阻抗谱 (EIS) 评估了 Au-ZnO 异质结构在各种条件下对 H2O2 传感的影响。结果表明，ALD 制造的 Au-ZnO 异质结构表现出最高的灵敏度之一，为 0.53 μA μM-1 cm-2，最宽的线性 H2O2 检测范围为 1.0 μM-120 mM，检测下限 (LOD) 为 0.78 μM，正常操作条件下具有优异的选择性，并且具有良好的长期稳定性。 ALD 沉积方法的利用为提高基于 Au-ZnO 异质结构的器件的各种能力提供了独特的机会，用于不同化学品的电流检测。