A radio frequency magnetron co-sputtering technique exploiting GaTe and ${\rm Sb}_2 {\rm Te}_3$Sb2Te3 targets was used for the fabrication of Ga-Sb-Te thin films. Prepared layers cover broad region of chemical composition (${\sim}{10.0 {-} 26.3}\,\, {\rm at.}$∼10.0-26.3at. % of Ga, ${\sim}{19.9 {-} 34.4}\,\, {\rm at.}$∼19.9-34.4at. % of Sb) while keeping Te content fairly constant (53.8-55.6 at. % of Te). Upon crystallization induced by annealing, large variations in electrical contrast were found, reaching a sheet resistance ratio of ${{R}_{\rm annealed}}/{{R}_{\rm as - deposited}}\;\sim{2.2} \times {{10}^{ - 8}}$Rannealed/Ras-deposited∼2.2×10-8 for the ${{\rm Ga}_{26.3}}{{\rm Sb}_{19.9}}{{\rm Te}_{53.8}}$Ga26.3Sb19.9Te53.8 layer. Phase transition from the amorphous to crystalline state further leads to huge changes of optical functions demonstrated by optical contrast values up to $|\Delta n| + |\Delta k| = {4.20}$|Δn|+|Δk|=4.20 for ${{\rm Ga}_{26.3}}{{\rm Sb}_{19.9}}{{\rm Te}_{53.8}}$Ga26.3Sb19.9Te53.8 composition.

中文翻译：

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GaTe-Sb2Te3薄膜的相变特性。

利用GaTe和$ {\ rm Sb} _2 {\ rm Te} _3 $ Sb2Te3靶材的射频磁控共溅射技术被用于制造Ga-Sb-Te薄膜。制备的层覆盖了广泛的化学成分区域（$ {\ sim} {10.0 {-} 26.3} \，\，{\ rm at。} $〜10.0-26.3at。％Ga，$ {\ sim} {19.9 { -} 34.4} \，\，{\ rm at。} $〜Sb的19.9-34.4at。％，同时保持Te含量相当恒定（Te的53.8-55.6 at。％）。在退火引起的晶化过程中，发现电对比度存在较大差异，达到的薄层电阻比为$ {{R} _ {\ rm退火}} / {{R} _ {\ rm as-沉积}} \; \ sim {2.2} \ times {{10} ^ {-8}} $$ {{\ rm Ga} _ {26.3}} {{\ rm Sb} _ {19.9} $$的退火/拉斯沉积〜2.2×10-8 }} {{\ rm Te} _ {53.8}} $ Ga26.3Sb19.9Te53.8层。从非晶态到结晶态的相变进一步导致光学功能发生巨大变化，其光学对比度值高达$ | \ Delta n |。+ | \ Delta k | = $ {{\ rm Ga} _ {26.3}} {{\ rm Sb} _ {19.9}} {{\ rm Te} _ {{3.8.8}} $由Ga26.3Sb19.9Te53.8组成。