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Low-temperature copper bonding strategy via hierarchical microscale taper array fabricated by femtosecond laser
Laser Physics Letters ( IF 1.4 ) Pub Date : 2020-02-14 , DOI: 10.1088/1612-202x/ab6f74
Cong Wang , Shu Man , Zhi Luo , Yu Zheng , Dengji Guo , Kaiwen Ding , Biwei Wu , Ji’an Duan

In this study, a facial and effective method is proposed to improve interfacial bonding strength via a hierarchical microscale taper array fabricated by a femtosecond laser. Copper interfaces with microstructures can be easily sintered by nano-silver paste under low bonding temperature and additional pressure. In order to analyze the sintering quality, the interconnected cross-section is characterized after a shear test. The shear strength of copper with microscale taper arrays under different sintering pressures is also investigated. Experimental results show that the shear strength of the interconnected Cu interface with a microscale taper array is greatly improved, reaching up to 65.53 MPa at a low bonding temperature of 260 °C. It is demonstrated that the enhancement of shear strength is mainly due to the increase of contact area and mechanical locking. This technology could provide more possibilities for electronic packaging interconnection under low-temperature and low-pre...

中文翻译:

飞秒激光通过分层微尺度锥阵列实现低温铜键合策略

在这项研究中,提出了一种面部有效的方法,以通过飞秒激光制造的分级微尺度锥形阵列来提高界面结合强度。具有纳米结构的铜界面可以很容易地在低键合温度和附加压力下通过纳米银浆烧结。为了分析烧结质量,在剪切试验之后表征互连的横截面。还研究了在不同烧结压力下具有微米级锥度阵列的铜的剪切强度。实验结果表明,具有微型锥度阵列的互连Cu界面的剪切强度大大提高,在260°C的低键合温度下达到65.53 MPa。结果表明,剪切强度的提高主要归因于接触面积的增加和机械锁定。这项技术可以为低温,低气压下的电子封装互连提供更多可能性。
更新日期:2020-02-14
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