Single-Mode Microwave Heating-Induced Concurrent Out-of-Plane Twin Growth Suppression and In-Plane Epitaxial Growth Promotion of b-Oriented MFI Film under Mild Reaction Conditions.,Chemistry - An Asian Journal

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Single-Mode Microwave Heating-Induced Concurrent Out-of-Plane Twin Growth Suppression and In-Plane Epitaxial Growth Promotion of b-Oriented MFI Film under Mild Reaction Conditions.
Chemistry - An Asian Journal ( IF 3.5 ) Pub Date : 2020-03-10 , DOI: 10.1002/asia.202000111
Yi Liu ₁ , Jinming Lu ₁ , Yi Liu ₁

Affiliation

In this study, single-mode microwave heating was applied in epitaxial growth of b-oriented MFI seed monolayer prepared by facile manual assembly, resulting in the formation of well-intergrown and highly b-oriented MFI film with few twins. It exhibited a precise molecular sieving property at a reaction temperature no higher than 100 °C within 2 hours, therefore making it possible for easy operation in an open environment. The capability for concurrent suppression of undesired out-of-plane twin growth and promotion of in-plane epitaxial growth rate under mild reaction conditions was attributed to the obvious superiority of single-mode microwave heating in comparison with conventional multi-mode microwave heating in aspects of microwave field uniformity and intensity. Our research indicated that the single-mode microwave heating technique could potentially be a useful tool for improving the microstructure and therefore the performance of diverse zeolite films.

中文翻译：

轻度反应条件下b取向MFI膜的单模微波加热诱导并发面外双生生长抑制和面内外延生长促进。

在这项研究中，单模微波加热被应用于外延生长的b方向MFI种子单层通过容易的手工组装制备，导致形成良好共生和高度b取向的MFI膜，几乎没有双胞胎。它在2小时内的反应温度不高于100°C的条件下显示出精确的分子筛性能，因此可以在开放的环境中轻松操作。在温和的反应条件下同时抑制不希望的面外孪晶生长和促进面内外延生长的能力归因于与传统的多模微波加热相比，单模微波加热具有明显的优势微波场的均匀性和强度。

更新日期：2020-04-22

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