The thermal stability and optical bandgap of the amorphous Sb 4 Te film can be improved significantly by combining with VO 2 , which leads to a high crystallization temperature (around 220 °C), good data retention (ten-year data retention above 130 °C), and high amorphous resistance. The crystallization mechanism of Sb 4 Te changes from growth-dominated mode into nucleation-dominate one, which is confirmed by in situ microstructure observation experimentally and crystallization kinetics index theoretically, due to the long-range orders of Sb–Te and Sb–Sb bonds disorganized by the introduction of VO 2 nano-grid framework. The Sb 4 Te crystallites can be refined and confined in the VO 2 nano-grid framework. VO 2 –Sb 4 Te films with less than 15 at.% of VO 2 maintain the high crystallization speed. The nano-grid framework of VO 2 enables an efficient way to invade the long-order bon...

中文翻译：

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VO 2纳米网格框架对Sb 4 Te薄膜的可调谐结晶机理突破了热稳定性和结晶速度之间的权衡

通过与VO 2结合，可以显着改善非晶态Sb 4 Te膜的热稳定性和光学带隙，从而导致较高的结晶温度（约220°C），良好的数据保留（高于130°C的十年数据保留） ）和高非晶电阻。Sb 4 Te的结晶机理从生长主导模式转变为成核主导模式，这是由于Sb–Te和Sb–Sb键的长程顺序的实验性原位显微组织观察和理论上的结晶动力学指标所证实的。由于引入了VO 2纳米网格框架而变得混乱。可以在VO 2纳米网格框架中细化和限制Sb 4 Te微晶。VO 2 -Sb 4 Te薄膜中的VO 2含量低于15 at。％时，仍可保持较高的结晶速度。