There exists significant interest in the demonstration and development of alternative mid-infrared emitters, with future applications for thermal scene projection, low-cost infrared sensing, and possible long-wavelength quantum communication applications. Type-II In(Ga)Sb quantum dots grown in InAs matrices have the potential to serve as a viable material system for wavelength-flexible, mid-infrared sources. Here, we dramatically expand the range of potential applications of these mid-infrared quantum emitters through the demonstration of surface-emitting electrically pumped mid-infrared light-emitting diodes with active regions utilizing type-II In(Ga)Sb quantum dots. Two device structures were studied, the first iteration being a single In(Ga)Sb insertion layer within a simple PIN structure and the second being a design engineered for improved room temperature emission with the addition of lattice matched AlAsSb cladding at the anode to block electrons and five layers of In(Ga)Sb dots to increase the effective volume of active material. Samples were grown by molecular beam epitaxy and the electrical and optical properties for each design were characterized as a function of temperature.There exists significant interest in the demonstration and development of alternative mid-infrared emitters, with future applications for thermal scene projection, low-cost infrared sensing, and possible long-wavelength quantum communication applications. Type-II In(Ga)Sb quantum dots grown in InAs matrices have the potential to serve as a viable material system for wavelength-flexible, mid-infrared sources. Here, we dramatically expand the range of potential applications of these mid-infrared quantum emitters through the demonstration of surface-emitting electrically pumped mid-infrared light-emitting diodes with active regions utilizing type-II In(Ga)Sb quantum dots. Two device structures were studied, the first iteration being a single In(Ga)Sb insertion layer within a simple PIN structure and the second being a design engineered for improved room temperature emission with the addition of lattice matched AlAsSb cladding at the anode to block electrons and five layers of In(Ga)Sb dots to increase the ef...

中文翻译：

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来自 II 型 In(Ga)Sb 量子点的中红外电致发光

人们对替代中红外发射器的演示和开发有着浓厚的兴趣，未来将应用于热场景投影、低成本红外传感和可能的长波长量子通信应用。在 InAs 基质中生长的 II 型 In(Ga)Sb 量子点有可能用作波长灵活的中红外源的可行材料系统。在这里，我们通过展示具有使用 II 型 In(Ga)Sb 量子点的有源区的表面发射电泵浦中红外发光二极管，显着扩大了这些中红外量子发射器的潜在应用范围。研究了两种器件结构，第一次迭代是一个简单的 PIN 结构内的单个 In(Ga)Sb 插入层，第二次迭代是一种设计用于改善室温发射，在阳极添加晶格匹配的 AlAsSb 包层以阻挡电子和五层 In( Ga)Sb 点以增加活性材料的有效体积。样品通过分子束外延生长，每个设计的电学和光学特性被表征为温度的函数。替代中红外发射器的演示和开发存在重大兴趣，未来将应用于热场景投影、低成本红外传感，以及可能的长波长量子通信应用。在 InAs 基质中生长的 II 型 In(Ga)Sb 量子点有可能用作波长灵活的中红外源的可行材料系统。在这里，我们通过展示具有使用 II 型 In(Ga)Sb 量子点的有源区的表面发射电泵浦中红外发光二极管，显着扩大了这些中红外量子发射器的潜在应用范围。研究了两种器件结构，第一次迭代是一个简单的 PIN 结构内的单个 In(Ga)Sb 插入层，第二次迭代是一种设计用于改善室温发射，在阳极添加晶格匹配的 AlAsSb 包层以阻挡电子和五层 In(Ga)Sb 点以增加效率... 我们通过展示具有使用 II 型 In(Ga)Sb 量子点的有源区的表面发射电泵浦中红外发光二极管，极大地扩展了这些中红外量子发射器的潜在应用范围。研究了两种器件结构，第一次迭代是一个简单的 PIN 结构内的单个 In(Ga)Sb 插入层，第二次迭代是一种设计用于改善室温发射，在阳极添加晶格匹配的 AlAsSb 包层以阻挡电子和五层 In(Ga)Sb 点以增加效率... 我们通过展示具有使用 II 型 In(Ga)Sb 量子点的有源区的表面发射电泵浦中红外发光二极管，极大地扩展了这些中红外量子发射器的潜在应用范围。研究了两种器件结构，第一次迭代是一个简单的 PIN 结构内的单个 In(Ga)Sb 插入层，第二次迭代是一种设计用于改善室温发射，在阳极添加晶格匹配的 AlAsSb 包层以阻挡电子和五层 In(Ga)Sb 点以增加效率...