A perpendicularly magnetized film is essentially important for spintronics applications, such as spin-transfer-torque type magnetoresistive random access memories, STT-MRAMs, and large perpendicular anisotropy energy, K u, with small saturation magnetization, M s, is required for reducing the critical current for the STT induced magnetization switching phenomenon. In this study, an equiatomic intermetallic compound, MnGaGe, was investigated in epitaxially grown film samples. Perpendicularly magnetized films with an M s value of about 260 emu/cm3 at 300 K were fabricated onto MgO (100) single crystal substrates. The maximum value of K u was 8.1 × 106 erg/cm3 at room temperature. Microstructure analysis using a scanning transmission electron microscope atomically revealed the Cu2Sb type crystal structure in the film sample. First principles calculations were also carried out to discuss the electronic structure. Using the analysis of the projected density of states for 3d-orbitals, the hybridization of the 3d-orbitals was suggested as a possible factor for promoting magnetocrystalline anisotropy. The MnGaGe film with the large K u and relatively small M s would be potentially used for spintronics applications.A perpendicularly magnetized film is essentially important for spintronics applications, such as spin-transfer-torque type magnetoresistive random access memories, STT-MRAMs, and large perpendicular anisotropy energy, K u, with small saturation magnetization, M s, is required for reducing the critical current for the STT induced magnetization switching phenomenon. In this study, an equiatomic intermetallic compound, MnGaGe, was investigated in epitaxially grown film samples. Perpendicularly magnetized films with an M s value of about 260 emu/cm3 at 300 K were fabricated onto MgO (100) single crystal substrates. The maximum value of K u was 8.1 × 106 erg/cm3 at room temperature. Microstructure analysis using a scanning transmission electron microscope atomically revealed the Cu2Sb type crystal structure in the film sample. First principles calculations were also carried out to discuss the electronic structure. Using the analysis of the projected density of states for 3d-orbitals, the hybrid...

中文翻译：

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外延生长的具有大垂直磁各向异性的 Cu2Sb 型 MnGaGe 薄膜

垂直磁化薄膜对于自旋电子学应用至关重要，例如自旋转移扭矩型磁阻随机存取存储器、STT-MRAM，并且需要大的垂直各向异性能量 K u 和小饱和磁化强度 M s，以减少STT 感应磁化开关现象的临界电流。在这项研究中，在外延生长的薄膜样品中研究了等原子金属间化合物 MnGaGe。在 MgO (100) 单晶衬底上制造了在 300 K 下 M s 值约为 260 emu/cm3 的垂直磁化薄膜。室温下 K u 的最大值为 8.1 × 106 erg/cm3。使用扫描透射电子显微镜的微观结构分析原子地揭示了薄膜样品中的 Cu2Sb 型晶体结构。还进行了第一性原理计算以讨论电子结构。使用对 3d 轨道的投影状态密度的分析，建议 3d 轨道的杂化是促进磁晶各向异性的可能因素。具有较大 K u 和相对较小 M s 的 MnGaGe 薄膜将有可能用于自旋电子学应用。垂直磁化薄膜对于自旋电子学应用至关重要，例如自旋转移扭矩型磁阻随机存取存储器、STT-MRAM 和需要大的垂直各向异性能量 K u 和小饱和磁化强度 M s 来降低 STT 感应磁化转换现象的临界电流。在这项研究中，等原子金属间化合物 MnGaGe，在外延生长的薄膜样品中进行了研究。在 MgO (100) 单晶衬底上制造了在 300 K 下 M s 值约为 260 emu/cm3 的垂直磁化薄膜。室温下 K u 的最大值为 8.1 × 106 erg/cm3。使用扫描透射电子显微镜的微观结构分析原子地揭示了薄膜样品中的 Cu2Sb 型晶体结构。还进行了第一性原理计算以讨论电子结构。使用对 3d 轨道的投影状态密度的分析，混合... 使用扫描透射电子显微镜的微观结构分析原子地揭示了薄膜样品中的 Cu2Sb 型晶体结构。还进行了第一性原理计算以讨论电子结构。使用对 3d 轨道的投影状态密度的分析，混合... 使用扫描透射电子显微镜的微观结构分析原子地揭示了薄膜样品中的 Cu2Sb 型晶体结构。还进行了第一性原理计算以讨论电子结构。使用对 3d 轨道的投影状态密度的分析，混合...