Deposition, annealing, and integration of ferroelectric Hf x Zr 1 - x O 2 (HZO) thin films on the high-mobility semiconductor InAs using atomic layer deposition are investigated. Electrical characterization reveals that the HZO films on InAs exhibit an enhanced remanent polarization compared to films formed on a reference TiN substrate, exceeding 20 μ C / cm 2 even down to an annealing temperature of 370 °C. For device applications, the thermal processes required to form the ferroelectric HZO phase must not degrade the high-κ/InAs interface. We find by evaluation of the capacitance-voltage characteristics that the electrical properties of the high-κ/InAs are not significantly degraded by the annealing process, and high-resolution transmission electron microscopy verifies a maintained sharp high-κ/InAs interface. (Less)

中文翻译：

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在增强极化的 InAs 上降低铁电 HZO 的退火温度

研究了使用原子层沉积技术在高迁移率半导体 InAs 上沉积、退火和集成铁电 Hf x Zr 1 - x O 2 (HZO) 薄膜。电气特性表明，与在参考 TiN 衬底上形成的薄膜相比，InAs 上的 HZO 薄膜表现出增强的剩余极化，甚至在 370°C 的退火温度下也超过 20 μC / cm 2。对于器件应用，形成铁电 HZO 相所需的热处理不能使高 κ/InAs 界面退化。我们通过对电容-电压特性的评估发现，退火过程不会显着降低高 κ/InAs 的电性能，并且高分辨率透射电子显微镜证实了保持清晰的高 κ/InAs 界面。（较少的）