This letter presents the nonlinear analysis of a microwave p-i-n diode limiter using a finite-difference time-domain (FDTD) field-circuit simulator based on physical models, rather than an equivalent circuit in circuit simulation. The corresponding flat leakage power is simulated and analyzed at frequencies of 2.45 and 2.8 GHz, as well as at different ambient temperatures. Simulation results were in good agreement with experimental measurements, showing that the improved FDTD simulator can accurately model the “power jump” in flat leakage power curves as well as the effects of temperature on the p-i-n diode limiter.

中文翻译：

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使用基于物理模型的场电路模拟器对微波限幅器进行非线性分析

这封信介绍了使用基于物理模型的有限差分时域 (FDTD) 场电路仿真器而非电路仿真中的等效电路对微波 pin 二极管限幅器进行非线性分析。相应的平坦泄漏功率在 2.45 和 2.8 GHz 的频率以及不同的环境温度下进行仿真和分析。仿真结果与实验测量结果非常吻合，表明改进的 FDTD 仿真器可以准确地模拟平坦泄漏功率曲线中的“功率跳跃”以及温度对 pin 二极管限幅器的影响。