In this letter, a quasi-coaxial through-silicon-via (TSV) is presented for millimeter-wave integrated circuit (IC) packaging. The quasi-coaxial-via (Q-COV) structure in which one side ground metal is removed can minimize the interconnect length when it is mounted, in comparison to the coaxial-via (COV) structure. Simulation analysis shows that the Q-COV has similar electrical characteristics as the COV up to 100 GHz even though there is no GND on one side. To make the small signal core of the Q-COV, the silicon-core metallization process was used and a Si-interposer with Q-COVs of 50- $\mu \text{m}$ core diameter was fabricated and mounted on the glass board for signal transition analysis. The measured transition loss in the mounted Si-interposer was very small, only about 0.6 dB at 100 GHz, and the return loss was more than 20 dB for the entire measured frequency band (0–110 GHz).

中文翻译：

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使用准同轴硅通孔 (TSV) 进行毫米波 IC 封装的超宽带信号传输

在这封信中，介绍了一种用于毫米波集成电路 (IC) 封装的准同轴硅通孔 (TSV)。与同轴通孔 (COV) 结构相比，去除一侧接地金属的准同轴通孔 (Q-COV) 结构在安装时可以最小化互连长度。仿真分析表明，即使一侧没有 GND，Q-COV 也具有与 COV 相似的电气特性，最高可达 100 GHz。为了制造 Q-COV 的小信号核心，使用了硅核心金属化工艺，并制造了具有 50- $\mu \text{m}$ 核心直径的 Q-COV 的硅中介层并安装在玻璃上信号转换分析板。在安装的硅中介层中测得的过渡损耗非常小，在 100 GHz 时仅为约 0.6 dB，