A new on-chip dual-band Wilkinson power divider (WPD), developed on a GaAs-based integrated passive device (IPD) process, is designed at 28/60 GHz for millimeter-wave (mmW) applications. Composite right/left-handed lines in microstrip form are employed to achieve the dual-band property. Thanks to the low-loss feature of the GaAs-based IPD process, the proposed mmW WPD ensures comparable performance when compared to its counterparts at microwave frequencies. Besides, the proposed design, one of the few on-chip dual-band WPDs designed in mmW bands, yields better performance in terms of input matching and power loss when compared with the previous work.

中文翻译：

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使用基于 GaAs 的 IPD 工艺的片上双频段毫米波功率分配器

一种基于 GaAs 集成无源器件 (IPD) 工艺开发的新型片上双频威尔金森功率分配器 (WPD)，专为毫米波 (mmW) 应用设计，频率为 28/60 GHz。采用微带形式的复合右手/左手线来实现双频带特性。由于基于 GaAs 的 IPD 工艺的低损耗特性，与微波频率的同类产品相比，拟议的 mmW WPD 确保了可比的性能。此外，与之前的工作相比，所提出的设计是在毫米波频段设计的少数片上双频段 WPD 之一，在输入匹配和功率损耗方面具有更好的性能。