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On-Chip Dual-Band Millimeter-Wave Power Divider Using GaAs-Based IPD Process
IEEE Microwave and Wireless Components Letters ( IF 2.374 ) Pub Date : 2020-01-15 , DOI: 10.1109/lmwc.2019.2961803
Huy Nam Chu; Ming-Jyun Jiang; Tzyh-Ghuang Ma

A new on-chip dual-band Wilkinson power divider (WPD), developed on a GaAs-based integrated passive device (IPD) process, is designed at 28/60 GHz for millimeter-wave (mmW) applications. Composite right/left-handed lines in microstrip form are employed to achieve the dual-band property. Thanks to the low-loss feature of the GaAs-based IPD process, the proposed mmW WPD ensures comparable performance when compared to its counterparts at microwave frequencies. Besides, the proposed design, one of the few on-chip dual-band WPDs designed in mmW bands, yields better performance in terms of input matching and power loss when compared with the previous work.
更新日期:2020-02-14

 

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