This letter presents the design and performance of two single-pole double-throw (SPDT) switches operating in $V$ -band (50–75 GHz) and $W$ -band (75–110 GHz). The millimeter-wave (mmW) integrated circuits (MMICs) are fabricated in a 50-nm gate-length metamorphic high-electron-mobility transistor technology. Special attention was paid to the reduction of the insertion loss (IL). Thus, both switch MMICs achieve an IL of 1–1.6 dB (average 1.2 dB), covering the entire $V$ -band and $W$ -band, respectively. The isolation (ISO) of the switches is better than 31.6 and 28.5 dB, respectively. The input power for 1 dB of IL compression is at least 22 and 19 dBm, respectively. A wafer mapping of both circuits exhibits a high yield and low spread of IL and ISO. Based on the given results, the presented SPDT switch MMICs demonstrates state-of-the-art performance.

中文翻译：

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采用变形 HEMT 技术的低损耗毫米波 SPDT 开关 MMIC

这封信介绍了两个单刀双掷 (SPDT) 开关的设计和性能 $V$ -频段 (50–75 GHz) 和 $W$ -频段（75–110 GHz）。毫米波 (mmW) 集成电路 (MMIC) 采用 50 纳米栅极长度变质高电子迁移率晶体管技术制造。特别注意减少插入损耗 (IL)。因此，两个开关 MMIC 都实现了 1–1.6 dB（平均 1.2 dB）的 IL，覆盖了整个 $V$ -带和 $W$ -带，分别。开关的隔离度 (ISO) 分别优于 31.6 和 28.5 dB。1 dB IL 压缩的输入功率分别至少为 22 和 19 dBm。两种电路的晶圆映射都表现出高产量和低 IL 和 ISO 扩散。基于给定的结果，提出的 SPDT 开关 MMIC 展示了最先进的性能。