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Ultrasensitive Multilayer MoS2‐Based Photodetector with Permanently Grounded Gate Effect
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2020-02-13 , DOI: 10.1002/aelm.201901256 Muhammad Naqi 1 , Manasa Kaniselvan 2 , Sooho Choo 1 , Gyuchull Han 2 , Sangjin Kang 1 , Jeonghun Kim 1 , Youngki Yoon 2 , Sunkook Kim 1
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2020-02-13 , DOI: 10.1002/aelm.201901256 Muhammad Naqi 1 , Manasa Kaniselvan 2 , Sooho Choo 1 , Gyuchull Han 2 , Sangjin Kang 1 , Jeonghun Kim 1 , Youngki Yoon 2 , Sunkook Kim 1
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2D materials, specifically MoS2 semiconductors, have received tremendous attention for photo‐sensing applications due to their tunable bandgap and low noise levels. A unique photodetector using multilayer MoS2 as the semiconductor channel, in which the gate electrode of the device is permanently connected to the grounded source electrode to introduce rectification, is reported. The proposed grounded‐gate photodiode exhibits high photoresponsivity of 1.031 A W−1, excellent photodetectivity (>6 × 1010 jones), and highly stable rise/fall time response (100–200 ms) under illumination of visible light (at the wavelengths of 405, 532, and 638 nm). Numerical device simulations using quantum transport methods and photoconductive effects are used to explain the device operation. It is also suggested that the gate metal work function can be carefully chosen to increase the sensitivity of the grounded‐gate photodetector by suppressing the dark current. The grounded‐gate device proposed, owing to the properties of rectifying behavior, low contact resistance, consistent photoresponsivity, and linear sensitivity, provides a new platform for next‐generation applications in the field of electronics and optoelectronics.
中文翻译：
基于MoS2的超灵敏多层光电探测器，具有永久接地的栅极效应
二维材料，特别是MoS 2半导体，由于其可调节的带隙和低噪声水平而在光敏应用中引起了极大的关注。报道了一种使用多层MoS 2作为半导体通道的独特光电探测器，其中器件的栅电极永久连接到接地的源电极以引入整流。拟议的接地栅光电二极管具有1.031 AW -1的高光响应性，出色的光检测率（> 6×10 10声），并在可见光（波长为405、532和638 nm）下高度稳定的上升/下降时间响应（100-200 ms）。使用量子传输方法和光电导效应的数值器件仿真可用来解释器件的操作。还建议可以谨慎选择栅极金属功函数，以通过抑制暗电流来增加接地栅极光电探测器的灵敏度。由于具有整流特性，低接触电阻，一致的光响应性和线性灵敏度等特性，建议的接地栅极器件为电子和光电领域的下一代应用提供了新的平台。
更新日期：2020-02-13
中文翻译：
基于MoS2的超灵敏多层光电探测器，具有永久接地的栅极效应
二维材料，特别是MoS 2半导体，由于其可调节的带隙和低噪声水平而在光敏应用中引起了极大的关注。报道了一种使用多层MoS 2作为半导体通道的独特光电探测器，其中器件的栅电极永久连接到接地的源电极以引入整流。拟议的接地栅光电二极管具有1.031 AW -1的高光响应性，出色的光检测率（> 6×10 10声），并在可见光（波长为405、532和638 nm）下高度稳定的上升/下降时间响应（100-200 ms）。使用量子传输方法和光电导效应的数值器件仿真可用来解释器件的操作。还建议可以谨慎选择栅极金属功函数，以通过抑制暗电流来增加接地栅极光电探测器的灵敏度。由于具有整流特性，低接触电阻，一致的光响应性和线性灵敏度等特性，建议的接地栅极器件为电子和光电领域的下一代应用提供了新的平台。
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