Capacitance-based techniques have been used to measure the electrical properties of halide perovskite solar cells (PSCs) such as defect activation energy and density, carrier concentration, and dielectric constant, which provide key information for evaluating the device performance. Here, we show that capacitance-based techniques cannot be used to reliably analyze the properties of defects in the perovskite layer or at its interface, because the high-frequency capacitance signature is due to the response of charge carriers in the hole-transport layer (HTL). For HTL-free PSCs, high-frequency capacitance can be considered as the geometric capacitance for analyzing the dielectric constant of the perovskite layer because there is no trapping and de-trapping of charge carriers in the perovskite layer. We further find that the low-frequency capacitance signature can be used to calculate the activation energy of the ionic conductivity of the perovskite layer, but the overlapping effects with charge transport materials must be avoided.

基于电容的技术已用于测量卤化钙钛矿太阳能电池（PSC）的电性能，例如缺陷活化能，密度，载流子浓度和介电常数，这些为评估器件性能提供了关键信息。在这里，我们表明基于电容的技术不能用于可靠地分析钙钛矿层或其界面处的缺陷的特性，因为高频电容签名是由于空穴传输层中载流子的响应引起的（ HTL）。对于不含HTL的PSC，可以将高频电容视为分析钙钛矿层介电常数的几何电容，因为在钙钛矿层中没有电荷载流子的俘获和去俘获。