Abstract Blue LEDs and HEMTs based on III-Nitride have been flourishing commercially across the globe, thanks largely to breakthroughs in the material quality of the wide-bandgap compound semiconductor back in the 1990s. The realizations of white-light LEDs, blu-ray systems, and lately efficient compact chargers have drastically changed the way we live and have contributed tremendously to global energy saving efforts. The maturity and diversity of modern discrete GaN-based devices open up opportunities for an integrated GaN platform with extended functionalities and applications. In this review paper, we present an overview of the monolithic and heterogeneous integration of GaN devices and components. Various methods for the integration of electronic, optoelectronic, and optical components based on GaN are discussed.

中文翻译：

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芯片级 GaN 集成

摘要 蓝光 LED 和基于 III 族氮化物的 HEMT 在全球范围内蓬勃发展，这主要归功于 1990 年代宽带隙化合物半导体材料质量的突破。白光 LED、蓝光系统和最近高效的紧凑型充电器的实现极大地改变了我们的生活方式，并为全球节能工作做出了巨大贡献。现代基于 GaN 的分立器件的成熟度和多样性为具有扩展功能和应用的集成 GaN 平台开辟了机会。在这篇评论论文中，我们概述了 GaN 器件和组件的单片和异质集成。讨论了基于 GaN 的电子、光电和光学元件集成的各种方法。